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PD - 94836
IRFIZ44NPBF
l l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
HEXFET(R) Power MOSFET VDSS = 55V RDS(on) = 0.024
D
G S
ID = 31A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
TO-220 FULLP AK
Absolute Maximum Ratings
Max.
31 22 160 45 0.3 20 210 25 4.5 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.

Max.
3.3 65
Units
C/W 11/13/03
IRFIZ44NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. 55 2.0 17
Typ. 0.055 7.3 69 47 60 4.5 7.5 1300 410 150 12
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.024 VGS = 10V, ID = 17A 4.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 25A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 65 ID = 25A 12 nC VDS = 44V 27 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 25A ns RG = 12 RD = 1.1, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of die contact VGS = 0V VDS = 25V pF = 1.0MHz, See Fig. 5 = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 31 showing the A G integral reverse 160 p-n junction diode. S 1.3 V TJ = 25C, IS = 17A, VGS = 0V 65 98 ns TJ = 25C, IF = 25A 160 240 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRFZ44N data and test conditions
VDD = 25V, starting TJ = 25C, L = 470H
RG = 25, IAS = 25A. (See Figure 12)
ISD 25A, di/dt 320A/s, VDD V(BR)DSS,
T J 175C
IRFIZ44NPBF
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
100
10
4.5V
4.5V
10
1 0.1
20s PULSE WIDTH TJ TC = 25C
1 10
A
100
1 0.1
20s PULSE WIDTH TCTJ 175C =
1 10
A
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 41A
I D , Drain-to-Source Current (A)
2.0
100
TJ = 25C TJ = 175C
1.5
1.0
10
0.5
1 4 5 6 7
V DS = 25V 20s PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFIZ44NPBF
2500
2000
Ciss
1500
Coss
1000
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
I D = 25A
16
V DS = 44V V DS = 28V
C, Capacitance (pF)
12
8
500
Crss
4
0 1 10 100
A
0 0 10 20 30
FOR TEST CIRCUIT SEE FIGURE 13
40 50 60 70
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID , Drain Current (A)
100
100
10s
TJ = 175C
100s
10
TJ = 25C
10
1ms
1 0.5 1.0 1.5 2.0
VGS = 0V
2.5
A
1 1
TC = 25C TJ = 175C Single Pulse
10
10ms
3.0
100
A
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFIZ44NPBF
35
VDS VGS
RD
30
RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
I D , Drain Current (A)
25 20 15 10 5 0
Fig 10a. Switching Time Test Circuit
VDS 90%
25
50
TC , Case Temperature ( C)
75
100
125
150
175
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFIZ44NPBF
EAS , Single Pulse Avalanche Energy (mJ)
VDS L
500
D.U.T. RG + V - DD
TOP
400
BOTTOM
ID 10A 18A 25A
10 V
IAS tp
0.01
300
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp VDD VDS
200
100
0
VDD = 25V
25 50 75 100 125 150
175
A
Starting TJ , Junction Temperature (C)
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFIZ44NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRFIZ44NPBF
TO-220 Full-Pak Package Outline
TO-220 Full-Pak Part Marking Information
E X AMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 199 9 IN T H E AS S E MB L Y L INE "K " IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T N U MB E R
IR F I840G 924 K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 9 = 1999 WE E K 24 L INE K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03

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